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HY57V651620B
4 Banks x 1M x 16Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL. Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a 2N rule.)
FEATURES
* * * Single 3.30.3V power supply Note) All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operation * * * * Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency ; 2, 3 Clocks
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* *
ORDERING INFORMATION
Part No.
HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75 HY57V651620BTC-8 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-10 HY57V651620BLTC-55 HY57V651620BLTC-6 HY57V651620BLTC-7 HY57V651620BLTC-75 HY57V651620BLTC-8 HY57V651620BLTC-10P HY57V651620BLTC-10S HY57V651620BLTC-10
Clock Frequency
183MHz 166MHz 143MHz 133MHz 125MHz 100MHz 100MHz 100MHz 183MHz 166MHz 143MHz 133MHz 125MHz 100MHz 100MHz 100MHz
Power
Organization
Interface
Package
Normal
4Banks x 1Mbits x16
LVTTL
400mil 54pin TSOP II
Low power
Note : VDD(Min) of HY57V651620B(L)TC-55/6/7 is 3.135V
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 2.0/Nov. 01
HY57V651620B
PIN CONFIGURATION
VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM /WE /CAS /RAS /CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS NC UDQM CLK CKE NC A11 A9 A8 A7 A6 A5 A4 VSS
54pin TSOP II 400mil x 875mil 0.8mm pin pitch
PIN DESCRIPTION
PIN CLK CKE CS BA0,BA1 A0 ~ A11 Clock Clock Enable Chip Select Bank Address Address Row Address Strobe, Column Address Strobe, Write Enable Data Input/Output Mask Data Input/Output Power Supply/Ground Data Output Power/Ground No Connection PIN NAME DESCRIPTION The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh Enables or disables all inputs except CLK, CKE and DQM Selects bank to be activated during RAS activity Selects bank to be read/written during CAS activity Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA7 Auto-precharge flag : A10 RAS, CAS and WE define the operation Refer function truth table for details Controls output buffers in read mode and masks input data in write mode Multiplexed data input / output pin Power supply for internal circuits and input buffers Power supply for output buffers No connection
RAS, CAS, WE LDQM, UDQM DQ0 ~ DQ15 VDD/VSS VDDQ/VSSQ NC
Rev. 2.0/Nov. 01
2
HY57V651620B
FUNCTIONAL BLOCK DIAGRAM
1Mbit x 4banks x 16 I/O Synchronous DRAM
Self refresh logic & timer
Internal Row counter
CLK CKE CS State Machine RAS CAS WE UDQM LDQM
Row active
1Mx16 Bank 3 Row Pre Decoders 1Mx16 Bank 2 X decoders 1Mx16 Bank 1 X decoders 1Mx16 Bank 0 X decoders DQ0 DQ1 I/O Buffer & Logic Sense AMP & I/O Gate
X decoders
refresh
Column Active
Memory Cell Array
Column Pre Decoders Y decoders
DQ14 DQ15
Bank Select
Column Add Counter
A0 A1 Address buffers A11 BA0 BA1
Address Registers Burst Counter
Mode Registers
CAS Latency
Data Out Control
Pipe Line Control
Rev. 2.0/Nov. 01
3
HY57V651620B
ABSOLUTE MAXIMUM RATINGS
Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS Short Circuit Output Current Power Dissipation Soldering Temperature Time TA TSTG VIN, VOUT VDD, VDDQ IOS PD TSOLDER Symbol 0 ~ 70 -55 ~ 125 -1.0 ~ 4.6 -1.0 ~ 4.6 50 1 260 10 Rating C C V V mA W C Sec Unit
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION (TA=0 to 70C)
Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VDD, VDDQ VIH VIL Min 3.0 2.0 VSSQ - 2.0 Typ. 3.3 3.0 0 Max 3.6 VDDQ + 2.0 0.8 Unit V V V Note 1,2 1,3 1,4
Note : 1.All voltages are referenced to VSS = 0V 2.VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V 3.VIH (max) is acceptable 5.6V AC pulse width with 3ns of duration 4.VIL (min) is acceptable -2.0V AC pulse width with 3ns of duration
AC OPERATING CONDITION (TA=0 to 70C, VDD=3.3 0.3VNote2, VSS=0V)
Parameter AC Input High / Low Level Voltage Input Timing Measurement Reference Level Voltage Input Rise / Fall Time Output Timing Measurement Reference Level Output Load Capacitance for Access Time Measurement Symbol VIH / VIL Vtrip tR / tF Voutref CL Value 2.4/0.4 1.4 1 1.4 50 Unit V V ns V pF 1 Note
Note : 1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF) For details, refer to AC/DC output circuit 2. VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
Rev. 2.0/Nov. 01
4
HY57V651620B
CAPACITANCE (TA=25C, f=1MHz)
Parameter Input capacitance CLK A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS, WE, UDQM, LDQM Data input / output capacitance DQ0 ~ DQ15 Pin Symbol CI1 CI2 CI/O Min 2 2.5 2 Max 4 5 6.5 Unit pF pF pF
OUTPUT LOAD CIRCUIT
Vtt=1.4V
RT=250
Output
Output 50pF
50pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA=0 to 70C, VDD=3.30.3VNote3)
Parameter Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage ILI ILO VOH VOL Symbol Min. -1 -1 2.4 Max 1 1 0.4 Unit uA uA V V Note 1 2 IOH = -4mA IOL = +4mA
Note : 1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V 2.DOUT is disabled, VOUT=0 to 3.6 3..VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
Rev. 2.0/Nov. 01
5
HY57V651620B
DC CHARACTERISTICS II (TA=0 to 70C, VDD=3.30.3VNote5, VSS=0V)
Speed Parameter Symbol Test Condition -55 Operating Current Precharge Standby Current in Power Down Mode IDD1 IDD2P IDD2PS Burst length=1, One bank active tRC tRC(min), IOL=0mA CKE VIL(max), tCK = min CKE VIL(max), tCK = CKE VIH(min), CS VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins VDD0.2V or 0.2V CKE VIH(min), tCK = Input signals are stable. CKE VIL(max), tCK = min CKE VIL(max), tCK = CKE VIH(min), CS VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins VDD0.2V or 0.2V CKE VIH(min), tCK = Input signals are stable. tCK tCK(min), IOL=0mA All banks active CL=3 CL=2
150 90 200 140 90 200 130 90 200 120 90 200 2 500 120
Unit -6
110
Note
-7
100
-75
90 2 2
-8
80
-10P -10S
70 700
-10
80 mA mA mA 1
IDD2N Precharge Standby Current in Non Power Down Mode IDD2NS Active Standby Current in Power Down Mode IDD3P IDD3PS
15
mA
15 5 5
mA mA mA
IDD3N Active Standby Current in Non Power Down Mode IDD3NS
30
mA
30 110 90 200 90 90 180 90 90 180 90 90 150
mA mA mA mA mA uA 2 3 4 1
Burst Mode Operating Current Auto Refresh Current Self Refresh Current
IDD4 IDD5 IDD6
tRRC tRRC(min), All banks active CKE 0.2V
Note : 1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3.HY57V651620BTC-55/6/7/75/8/10P/10S/10 4.HY57V651620BLTC-55/6/7/75/8/10P/10S/10 5..VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
Rev. 2.0/Nov. 01
6
HY57V651620B
AC CHARACTERISTICS I (AC operating conditions unless otherwise noted)
-55 Parameter Symbol Min System clock cycle time CAS Latency = 3 CAS Latency = 2 tCK3 tCK2 tCHW tCLW tAC3 tAC2 tOH tDS tDH tAS tAH tCKS tCKH tCS tCH tOLZ tOHZ3 5.4 CAS Latency = 2 tOHZ2 5.4 5.4 3 6 3 6 3 6 3 6 3 8 ns 55 1000 10 2.75 2.75 2.5 1.5 0.8 1.5 0.8 1.5 0.8 1.5 0.8 1 5.4 6 10 2.5 2.5 2.7 1.5 0.8 1.5 0.8 1.5 0.8 1.5 0.8 1 5.4 6 Max Min 6 1000 10 2.5 2.5 2.7 1.5 0.8 1.5 0.8 1.5 0.8 1.5 0.8 1.5 5.4 6 Max Min 7 1000 10 2.5 2.5 2.7 1.5 0.8 1.5 0.8 1.5 0.8 1.5 0.8 1 2.7 5.4 6 5.4 Max Min 7.5 1000 10 3 3 3 2 1 2 1 2 1 2 1 1 3 6 6 6 Max Min 8 1000 10 3 3 3 2 1 2 1 2 1 2 1 1 3 6 6 6 Max Min 10 1000 12 3 3 3 2 1 2 1 2 1 2 1 1 3 6 6 6 Max Min 10 1000 12 3 3 3 3 1 3 1 3 1 3 1 1 3 8 8 8 Max Min 10 1000 ns ns ns ns 2 CAS Latency = 2 ns ns ns ns ns ns ns ns ns ns ns ns 1 1 1 1 1 1 1 1 1 1 Max ns -6 -7 -75 -8 -10P -10S -10 Unit Note
Clock high pulse width Clock low pulse width Access time from clock Data-out hold time Data-Input setup time Data-Input hold time Address setup time Address hold time CKE setup time CKE hold time Command setup time Command hold time CLK to data output in low Z-time CLK to data output in high Z-time CAS Latency = 3 CAS Latency = 3
Note : 1.Assume tR / tF (input rise and fall time ) is 1ns 2.Access times to be measured with input signals of 1v/ns edge rate
Rev. 2.0/Nov. 01
7
HY57V651620B
AC CHARACTERISTICS I
-55 Parameter Symbol Min Operation RAS Cycle Time Auto Refresh RAS to CAS Delay RAS Active Time RAS Precharge Time RAS to RAS Bank Active Delay CAS to CAS Delay Write Command to Data-In Delay Data-In to Precharge Command Data-In to Active Command DQM to Data-Out Hi-Z DQM to Data-In Mask MRS to New Command Precharge to Data Output Hi-Z Max Min 60 60 18 42 18 12 1 0 2 5 2 0 2 3 2 1 1 Max 100K 64 Min 70 702 20 42 20 14 1 0 1 4 2 0 1 3 2 1 1 Max 120K 64 Min 65 65 20 45 20 15 1 0 2 5 2 0 2 3 2 1 1 Max 100K 64 Min 68 68 20 48 20 16 1 0 2 5 2 0 2 3 2 1 1 Max 100K 64 Min 70 70 20 50 20 20 1 0 1 3 2 0 2 3 2 1 1 Max 100K 64 Min 70 70 20 50 20 20 1 0 1 3 2 0 2 3 2 1 1 Max 100K 64 Min 80 96 30 50 30 20 1 0 1 4 2 0 2 3 2 1 1 Max 100K 64 ns ns ns ns ns ns CLK CLK CLK CLK CLK CLK CLK CLK CLK CLK CLK ms 1 -6 -7 -75 -8 -10P -10S -10 Unit Note
tRC tRRC tRCD tRAS tRP tRRD tCCD tWTL tDPL tDAL tDQZ tDQM tMRD
55 60 16.5
38.5 100K 16.5 11 1 0 2 5 2 0 2 3 2 1 1 64
CAS Latency = 3 tPROZ3 CAS Latency = 2 tPROZ2
Power Down Exit Time Self Refresh Exit Time Refresh Time
tPDE tSRE tREF
Note : 1. A new command can be given tRRC after self refresh exit
Rev. 2.0/Nov. 01
8
HY57V651620B
DEVICE OPERATING OPTION TABLE
HY57V651620B(L)TC-55
CAS Latency 183MHz(6ns) 166MHz(7ns) 143MHz(7ns) 3CLKs 3CLKs 3CLKs tRCD 3CLKs 3CLKs 3CLKs tRAS 7CLKs 7CLKs 7CLKs tRC 10CLKs 10CLKs 10CLKs tRP 3CLKs 3CLKs 3CLKs tAC 5.4ns 5.4ns 5.4ns tOH 2.7ns 2.7ns 2.7ns
HY57V651620B(L)TC-6
CAS Latency 166MHz(6ns) 143MHz(7ns) 133MHz(7.5ns) 3CLKs 3CLKs 3CLKs tRCD 3CLKs 3CLKs 3CLKs tRAS 7CLKs 7CLKs 6CLKs tRC 10CLKs 10CLKs 9CLKs tRP 3CLKs 3CLKs 3CLKs tAC 5.4ns 5.4ns 5.4ns tOH 2.7ns 2.7ns 2.7ns
HY57V651620B(L)TC-7
CAS Latency 143MHz(7ns) 133MHz(7.5ns) 125MHz(8ns) 3CLKs 3CLKs 3CLKs tRCD 3CLKs 3CLKs 3CLKs tRAS 7CLKs 6CLKs 6CLKs tRC 10CLKs 9CLKs 9CLKs tRP 3CLKs 3CLKs 2CLKs tAC 5.4ns 5.4ns 6ns tOH 2.7ns 2.7ns 3ns
HY57V651620B(L)TC-75
CAS Latency 133MHz(7.5ns) 125MHz(8ns) 100MHz(10ns) 3CLKs 3CLKs 2CLKs tRCD 3CLKs 3CLKs 2CLKs tRAS 6CLKs 6CLKs 5CLKs tRC 9CLKs 9CLKs 7CLKs tRP 3CLKs 3CLKs 2CLKs tAC 5.4ns 6ns 6ns tOH 2.7ns 3ns 3ns
HY57V651620B(L)TC-8
CAS Latency 125MHz(8ns) 100MHz(10ns) 83MHz(12ns) 3CLKs 2CLKs 3CLKs tRCD 3CLKs 2CLKs 3CLKs tRAS 7CLKs 5CLKs 6CLKs tRC 10CLKs 7CLKs 9CLKs tRP 3CLKs 3CLKs 2CLKs tAC 6ns 6ns 6ns tOH 3ns 3ns 3ns
HY57V651620B(L)TC-10P
CAS Latency 100MHz(10ns) 83MHz(12ns) 66MHz(15ns) 2CLKs 2CLKs 2CLKs tRCD 2CLKs 2CLKs 2CLKs tRAS 5CLKs 5CLKs 4CLKs tRC 7CLKs 7CLKs 6CLKs tRP 2CLKs 2CLKs 2CLKs tAC 6ns 6ns 6ns tOH 3ns 3ns 3ns
Rev. 2.0/Nov. 01
9
HY57V651620B(L)TC-10S
CAS Latency 100MHz(10ns) 83MHz(12ns) 66MHz(15ns) 3CLKs 2CLKs 2CLKs tRCD 3CLKs 2CLKs 2CLKs tRAS 5CLKs 5CLKs 4CLKs tRC 8CLKs 7CLKs 6CLKs tRP 3CLKs 2CLKs 2CLKs tAC 6ns 6ns 6ns tOH 3ns 3ns 3ns
57V651620B(L)TC-10
CAS Latency 100MHz(10ns) 83MHz(12ns) 66MHz(15ns) 3CLKs 2CLKs 2CLKs tRCD 3CLKs 2CLKs 2CLKs tRAS 5CLKs 5CLKs 4CLKs tRC 8CLKs 7CLKs 6CLKs tRP 3CLKs 2CLKs 2CLKs tAC 8ns 6ns 6ns tOH 3ns 3ns 3ns
HY57V651620B
COMMAND TRUTH TABLE
Command Mode Register Set No Operation Bank Active Read H Read with Autoprecharge Write H Write with Autoprecharge Precharge All Banks H Precharge selected Bank Burst Stop DQM Auto Refresh Burst-READ-Single-WRITE Entry Self Refresh1 Exit H H H H H L H X L H L H Entry Precharge power down Exit L H L H Clock Suspend Entry Exit H L L L H V X V V X H X H X H X X X H L L H H X H X H X X X H X H X H X X L L L H X L H X L L L X L L L X H L H X X H L X V X X X X X L L H L X X L X X X A9 Pin High (Other Pins OP code) V X L H L L X CA H H X X L H L H X CA H L V CKEn-1 H H H CKEn X X L X L H L H H H H X RA L V V CS L H RAS L X CAS L X WE L X X X DQM X
ADDR
A10/ AP OP code
BA
Note
Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high 2. X = Dont care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address, Opcode = Operand Code, NOP = No Operation
Rev. 2.0/Nov. 01
11
HY57V651620B
PACKAGE INFORMATION
400mil 54pin Thin Small Outline Package
UNIT : mm(inch)
11.938(0.4700) 11.735(0.4620) 22.327(0.8790) 22.149(0.8720) 0.150(0.0059) 0.050(0.0020) 10.262(0.4040) 10.058(0.3960) 1.194(0.0470) 0.991(0.0390)
0.80(0.0315)BSC
0.400(0.016) 0.300(0.012)
5deg 0deg
0.597(0.0235) 0.406(0.0160)
0.210(0.0083) 0.120(0.0047)
Rev. 2.0/Nov. 01
12

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